Thin-Film Amorphous Silicon Position-Sensitive Detectors

2001 ◽  
Vol 13 (12-13) ◽  
pp. 1022-1026 ◽  
Author(s):  
J. Henry ◽  
J. Livingstone
2001 ◽  
Vol 184 (1-4) ◽  
pp. 443-447 ◽  
Author(s):  
A. Cabrita ◽  
J. Figueiredo ◽  
L. Pereira ◽  
H. Águas ◽  
V. Silva ◽  
...  

1998 ◽  
Vol 507 ◽  
Author(s):  
E. Fortunato ◽  
R. Martins

ABSTRACTThe aim of this work is to present an analytical model able to interpret the role of the thin collecting resistive layer on the static performances exhibited by 2D amorphous silicon hydrogenated pin thin film position sensitive detectors. In addition, experimental results concerning the device linearity and spatial resolution are presented and checked against the predicted values of the analytical model proposed.


1996 ◽  
Vol 272 (1) ◽  
pp. 148-156 ◽  
Author(s):  
Elvira Fortunato ◽  
Guilherme Lavareda ◽  
Fernando Soares ◽  
Rodrigo Martins

1995 ◽  
Vol 377 ◽  
Author(s):  
R. Martins ◽  
G. Lavareda ◽  
F. Soares ◽  
E. Fortunato

ABSTRACTThe aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H ID Thin Film Position Sensitive Detectors (ID TFPSD). The experimental data recorded in ID TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.


2000 ◽  
Vol 609 ◽  
Author(s):  
Elvira M.C. Fortunato ◽  
Donatello Brida ◽  
Isabel M.M. Ferreira ◽  
H. M.B. Åguas ◽  
Patrícia Nunes ◽  
...  

ABSTRACTLarge area thin film position sensitive detectors based on amorphous silicon technology have been prepared on polyimide substrates using the conventional plasma enhanced chemical vapour deposition technique. The sensors have been characterised by spectral response, illuminated I-V characteristics and position detectability measurements. The obtained one dimensional position sensors with 5 mm wide and 60 mm long present a maximum spectral response at 600 nm, an open circuit voltage of 0.6 V and a position detectability with a correlation of 0.9989 associated to a standard deviation of 1×10−2, comparable to those ones produced on glass substrates. The surface of the sensors at each stage of fabrication was investigated by Atomic Force Microscopy.


2006 ◽  
Vol 514-516 ◽  
pp. 13-17 ◽  
Author(s):  
Rodrigo Martins ◽  
Daniel Costa ◽  
Hugo Águas ◽  
Fernanda Soares ◽  
António Marques ◽  
...  

This work aims to report results of the spatial and frequency optical detection limits of integrated arrays of 32 one-dimensional amorphous silicon thin film position sensitive detectors with nip or MIS structure, under continuous and pulsed laser operation conditions. The arrays occupy a total active area of 45 mm2 and have a plane image resolution better than 15 m with a cut-off frequency of about 6.8 kHz. The non-linearity of the array components varies with the frequency, being about 1.6% for 200 Hz and about 4% for the cut-off frequency (6.8 kHz).


1995 ◽  
Vol 377 ◽  
Author(s):  
David K. Biegelsen ◽  
Warren B. Jackson ◽  
René Lujan ◽  
David Jared ◽  
Richard L. Weisfield

ABSTRACTThe human visual system perceives much smaller spatial steps in edges between high contrast regions than equivalents fine, periodic features. This characteristic is known as hyperacuity. We have designed, simulated, fabricated and characterized amorphous silicon sensors which provide hyperacuity information. The individual pixels are position sensitive detectors, the outputs of which provide the x and y first moments of the cell illumination pattern as well as the average gray level. In the simplest case the top electrode of a standard p-i-n diode sensor is replaced by four edge strip electrodes. Both quadrilateral cells (having all four lateral electrodes on the same side of the p-i-n diode) and duolateral cells (having x-electrodes on top and y-electrodes on bottom) have been tested. Results of probing the cells with rastered spots show that both types provide usable linearity and sensitivity. The duolateral structure provides greater orthogonality of the x and y information. One μm spatial resolution can be achieved with devices compatible with standard amorphous silicon sensor processing.


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